Resonant tunneling of charge carriers in InGaN/GaN superlattice

33rd International Conference on the Physics of Semiconductors

Kopyev, V.V.^1 ; Prudaev, I.A.^1 ; Oleynik, V.L.^1

Functional Electronics Laboratory, Tomsk State University, 36 Lenin Avenue, Tomsk, Tomsk

634050, Russia^1

关键词: Barrier thickness;    InGaN/GaN;    Inhomogeneous distribution;    Negative differential resistances;    Reverse current-voltage characteristics;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012052/pdf
DOI  :  10.1088/1742-6596/864/1/012052

来源: IOP

【 摘 要 】

The result of studies of resonant tunnelling of charge carriers in InGaN/GaN unipolar structure is presented. Authors show that at temperatures below 150 K the multiple negative-differential resistance regions are observed on a reverse current-voltage characteristic which is typical for inhomogeneous distribution field for sample with 6 nm barrier thickness. At GaN barrier thickness 3 and 12 nm resonant tunneling were not observed.