会议论文详细信息
33rd International Conference on the Physics of Semiconductors
Improved Ohmic-contact to AlGaN/GaN using Ohmic region recesses by self-terminating thermal oxidation assisted wet etching technique
Liu, J.^1 ; Wang, J.^1 ; Wang, H.^1 ; Zhu, L.^1 ; Wu, W.^1
Institute of Microelectronics, Peking University, Beijing
100871, China^1
关键词: Contact structure;    Isolation leakage;    Lower temperatures;    Rapid thermal annealing (RTA);    Schottky contacts;    Temperature window;    Thermal oxidation;    Wet etching techniques;   
Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012019/pdf
DOI  :  10.1088/1742-6596/864/1/012019
来源: IOP
PDF
【 摘 要 】

Lower Ti/Al/Ni/Au Ohmic contact resistance on AlGaN/GaN with wider rapid thermal annealing (RTA) temperature window was achieved using recessed Ohmic contact structure based on self-terminating thermal oxidation assisted wet etching technique (STOAWET), in comparison with conventional Ohmic contacts. Even at lower temperature such as 650°C, recessed structure by STOAWET could still obtain Ohmic contact with contact resistance of 1.97Ω•mm, while conventional Ohmic structure mainly featured as Schottky contact. Actually, both Ohmic contact recess and mesa isolation processes could be accomplished by STOAWET in one process step and the process window of STOAWET is wide, simplifying AlGaN/GaN HEMT device process. Our experiment shows that the isolation leakage current by STOAWET is about one order of magnitude lower than that by inductivity coupled plasma (ICP) performed on the same wafer.

【 预 览 】
附件列表
Files Size Format View
Improved Ohmic-contact to AlGaN/GaN using Ohmic region recesses by self-terminating thermal oxidation assisted wet etching technique 580KB PDF download
  文献评价指标  
  下载次数:21次 浏览次数:36次