33rd International Conference on the Physics of Semiconductors | |
Improved Ohmic-contact to AlGaN/GaN using Ohmic region recesses by self-terminating thermal oxidation assisted wet etching technique | |
Liu, J.^1 ; Wang, J.^1 ; Wang, H.^1 ; Zhu, L.^1 ; Wu, W.^1 | |
Institute of Microelectronics, Peking University, Beijing | |
100871, China^1 | |
关键词: Contact structure; Isolation leakage; Lower temperatures; Rapid thermal annealing (RTA); Schottky contacts; Temperature window; Thermal oxidation; Wet etching techniques; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012019/pdf DOI : 10.1088/1742-6596/864/1/012019 |
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来源: IOP | |
【 摘 要 】
Lower Ti/Al/Ni/Au Ohmic contact resistance on AlGaN/GaN with wider rapid thermal annealing (RTA) temperature window was achieved using recessed Ohmic contact structure based on self-terminating thermal oxidation assisted wet etching technique (STOAWET), in comparison with conventional Ohmic contacts. Even at lower temperature such as 650°C, recessed structure by STOAWET could still obtain Ohmic contact with contact resistance of 1.97Ω•mm, while conventional Ohmic structure mainly featured as Schottky contact. Actually, both Ohmic contact recess and mesa isolation processes could be accomplished by STOAWET in one process step and the process window of STOAWET is wide, simplifying AlGaN/GaN HEMT device process. Our experiment shows that the isolation leakage current by STOAWET is about one order of magnitude lower than that by inductivity coupled plasma (ICP) performed on the same wafer.
【 预 览 】
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Improved Ohmic-contact to AlGaN/GaN using Ohmic region recesses by self-terminating thermal oxidation assisted wet etching technique | 580KB | download |