Effect of rapid thermal annealing on the structural and electrical properties of RF sputtered CCTO thin film

National Conference on Processing and Characterization of Materials

Tripathy, N.^1 ; Das, K.C.^1 ; Ghosh, S.P.^1 ; Bose, G.^2 ; Kar, J.P.^1

Department of Physics and Astronomy, National Institute of Technology, Rourkela

769008, India^1

FST, IFHE University, Hyderabad

501203, India^2

关键词: Annealing temperatures;    As-deposited thin films;    C-V measurement;    FESEM;    Metal Oxide Semiconductor structure;    Rapid thermal annealing (RTA);    rf-Magnetron sputtering;    Structural and electrical properties;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/178/1/012009/pdf
DOI  :  10.1088/1757-899X/178/1/012009

来源: IOP

【 摘 要 】

CaCu3Ti4O12(CCTO) thin films have been deposited by RF magnetron sputtering on silicon substrates at room temperature. As-deposited thin films were subjected to rapid thermal annealing (RTA) at different temperatures ranging from 850°C to 1000°C. XRD and capacitance - voltage studies indicate that the structural and electrical properties of CCTO thin film strongly depend upon the annealing temperature. XRD pattern of CCTO thin film annealed at 950°C revealed the polycrystalline nature with evolutions of microstructures. Electrical properties of the dielectric films were investigated by fabricating Al/CCTO/Si metal oxide semiconductor structure. Electrical properties were found to be deteriorated with increasing in annealing temperature.