High-temperature lasing in diode microdisk lasers with InAs/InGaAs quantum dots

18th International Conference PhysicA.SPb

Moiseev, E.I.^1 ; Kryzhanovskaya, N.V.^1,2 ; Polubavkina, Yu.S.^1 ; Maximov, M.V.^1 ; Kulagina, M.M.^2 ; Troshkov, S.I.^2 ; Zadiranov, Yu.M.^2 ; Lipovskii, A.A.^1,5 ; Mukhin, I.S.^1,3 ; Guina, M.^4 ; Niemi, T.^4 ; Zhukov, A.E.^1

St Petersburg Academic University, 8/3 Khlopina, St-Petersburg

194021, Russia^1

Ioffe Institute, 26 Polytechnicheskaya, St-Petersburg

194021, Russia^2

ITMO University, Kronverkskii 49, St-Petersburg

197101, Russia^3

Optoelectronics Research Centre, Tampere University of Technology, Tampere, Finland^4

Peter the Great St.Petersburg Polytechnic University, St.-Petersburg

195251, United States^5

关键词: Continuous Wave;    High temperature;    Inas/ingaas quantum dots;    Microdisk laser;    Side mode suppression ratios;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/769/1/012056/pdf
DOI  :  10.1088/1742-6596/769/1/012056

来源: IOP

【 摘 要 】

We demonstrate that quantum dot microdisk lasers are able to operate under continuous wave current injection at 100 °C. We also present a novel method for increasing a side mode suppression ratio in microdisk lasers.