Room temperature continuous wave operation of injection quantum dot microdisk lasers

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Kryzhanovskaya, N.V.^1 ; Maximov, M.V.^1,2 ; Nadtochiy, A.M.^1 ; Blokhin, S.A.^2 ; Bobrov, M.A.^2,3 ; Kulagina, M.M.^2 ; Troshkov, S.I.^2 ; Zadiranov, Yu.M.^2 ; Lipovskii, A.A.^1,3 ; Moiseev, E.I.^1 ; Kudashova, Yu.V.^1 ; Ustinov, V.M.^2 ; Zhukov, A.E.^1,3

Saint Petersburg National Research Academic University of RAS, St Petersburg, Russia^1

A F Ioffe Physical-Technical Institute of RAS, St Petersburg, Russia^2

Peter the Great St Petersburg Polytechnic University, St Petersburg, Russia^3

关键词: Continuous Wave;    External cooling;    GaAs substrates;    Lasing wavelength;    Microdisk laser;    Room temperature continuous wave operation;    Thermal impedance;    Threshold currents;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012002/pdf
DOI  :  10.1088/1742-6596/643/1/012002

来源: IOP

【 摘 要 】

We present results of characterization of injection microdisk lasers with InAs/InGaAs self-organized quantum dot active region grown on a GaAs substrate. The minimal microdisk diameter is 15 μm. The microlasers operate in continuous wave regime at room temperature without external cooling. Lasing wavelength is around 1.26... 1.27 μm, minimal threshold current is 1.6 mA (threshold current density 900 A/cm2). Specific thermal impedance is estimated to be 5•0-3°C•cm2/W.