Design and fabrication of ultrathin silicon-nitride membranes for use in UV-visible airgap-based MEMS optical filters

27th Micromechanics and Microsystems Europe Workshop

物理学;力学

Ghaderi, Mohammadamir^1 ; Wolffenbuttel, Reinoud F.^1

Electronic Instrumentation Laboratory, Microelectronics Department, Faculty of EEMCS, Delft University of Technology, Delft, Netherlands^1

关键词: Dielectric membranes;    Fabrication tolerances;    Mechanical requirements;    Optical and mechanical designs;    Optical characterization;    PECVD silicon nitride;    Silicon Nitride Film;    Spectral reflectances;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/757/1/012032/pdf
DOI  :  10.1088/1742-6596/757/1/012032

学科分类：力学，机械学

来源: IOP

【 摘 要 】

MEMS-based airgap optical filters are composed of quarter-wave thick high-index dielectric membranes that are separated by airgaps. The main challenge in the fabrication of these filters is the intertwined optical and mechanical requirements. The thickness of the layers decreases with design wavelength, which makes the optical performance in the UV more susceptible to fabrication tolerances, such as thickness and composition of the deposited layers, while the ability to sustain a certain level of residual stress by the structural strength becomes more critical. Silicon-nitride has a comparatively high Young's modulus and good optical properties, which makes it a suitable candidate as the membrane material. However, both the mechanical and optical properties in a silicon-nitride film strongly depend on the specifics of the deposition process. A design trade-off is required between the mechanical strength and the index of refraction, by tuning the silicon content in the silicon-nitride film. However, also the benefit of a high index of refraction in a silicon-rich film should be weighed against the increased UV optical absorption. This work presents the design, fabrication, and preliminary characterization of one and three quarter-wave thick silicon-nitride membranes with a one-quarter airgap and designed to give a spectral reflectance at 400 nm. The PECVD silicon-nitride layers were initially characterized, and the data was used for the optical and mechanical design of the airgap filters. A CMOS compatible process based on polysilicon sacrificial layers was used for the fabrication of the membranes. Optical characterization results are presented.