Development and fabrication of a very High-g sensor for very high impact applications

27th Micromechanics and Microsystems Europe Workshop

物理学;力学

Mackowiak, Piotr^1 ; Mukhopadhyay, Biswajit^1 ; Hu, Xiaodong^2 ; Ehrmann, Oswin^1,2 ; Lang, Klaus-Dieter^1,2 ; Linke, Stefan^2 ; Chu, Anthony^3 ; Ngo, Ha-Duong^1,4

Fraunhofer Institute for Reliability and Microintegration, Germany^1

Technische Universität Berlin, Germany^2

TE Connectivity, Switzerland^3

University of Applied Sciences Berlin, Germany^4

关键词: High impact;    Piezo-resistive;    Silicon on insulator (SOI);   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/757/1/012016/pdf
DOI  :  10.1088/1742-6596/757/1/012016

学科分类：力学，机械学

来源: IOP

【 摘 要 】

In this paper we present the first time our development work of a family of silicon on insulator (SOI)- based piezoresistive MEMS very high G sensors for measurement of accelerations up to 60.000 g. Two sensors have been realized, one for 20.000g and one for 60.000g.