Accelerator-based electron beam technologies for modification of bipolar semiconductor devices

2nd Conference on Plasma & Laser Research and Technologies

Pavlov, Y.S.^1 ; Surma, A.M.^2 ; Lagov, P.B.^1,3 ; Fomenko, Y.L.^4 ; Geifman, E.M.^5

Laboratory of Radiation Technologies, A.N. Frumkin Institute of Physical Chemistry and Electrochemistry Russian Academy of Sciences, Moscow

119071, Russia^1

R and D Centre, JSC Proton-Electrotex, Oryol

302040, Russia^2

Department of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology, MISiS (NUST MISiS), Moscow

119071, Russia^3

SC VSP-Mikron, Voronezh

394007, Russia^4

JSC Electrovipryamitel, Saransk, Mordovia

430001, Russia^5

关键词: Electrical parameter;    Electrically actives;    Electron beam technology;    Fast recovery diodes;    Operating temperature ranges;    Radiation processing;    Recombination centres;    Temperature compensated;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/747/1/012085/pdf
DOI  :  10.1088/1742-6596/747/1/012085

来源: IOP

【 摘 要 】

Radiation processing technologies for static and dynamic parameters modification of silicon bipolar semiconductor devices implemented. Devices of different classes with wide range of operating currents (from a few mA to tens kA) and voltages (from a few volts to 8 kV) were processed in large scale including power diodes and thyristors, high-frequency bipolar and IGBT transistors, fast recovery diodes, pulsed switching diodes, precise temperature- compensated Zener diodes (in general more than fifty 50 device types), produced by different enterprises. The necessary changes in electrical parameters and characteristics of devices caused by formation in the device structures of electrically active and stable in the operating temperature range sub-nanoscale recombination centres. Technologies implemented in the air with high efficiency and controllability, and are an alternative to diffusion doping of Au or Pt, γ-ray, proton and low-Z ion irradiation.