Diamond single crystal-surface modification under high- fluence ion irradiation

2nd Conference on Plasma & Laser Research and Technologies

Anikin, V.A.^1 ; Borisov, A.M.^1 ; Kazakov, V.A.^1,2 ; Mashkova, E.S.^3 ; Palyanov, Yu N.^4 ; Popov, V.P.^5 ; Shmytkova, E.A.^2 ; Sigalaev, S.K.^2

Moscow Aviation Institute, National Research University, Volokolamskoe sh. 4, Moscow

125993, Russia^1

Keldysh Research Center, Onezhskaya str. 8, Moscow

125438, Russia^2

Skobel'Tsyn Institute of Nuclear Physics, Moscow State University, GSP-1, Leninskie gory, Moscow

119991, Russia^3

Sobolev Institute of Geology and Mineralogy, Ac. Koptyuga ave. 3, Novosibirsk

630090, Russia^4

A v Rzhanov Institute of Semiconductor Physics, pr. Lavrentieva 13, Novosibirsk

630090, Russia^5

关键词: Diamond single crystals;    Electrically conductive;    Fluences;    High-fluence ion irradiations;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/747/1/012025/pdf
DOI  :  10.1088/1742-6596/747/1/012025

来源: IOP

【 摘 要 】

The modification of (111) face of synthetic diamond has been studied experimentally for high-fluence 30 keV argon bombardment. It has been found that ion irradiation leads to the electrically conductive layer formation the sheet resistance of which decreases more than 100 times while changing the temperature of the irradiated diamond from 70 to 400oC. This effect, as well as significant changes of optical transmittance after ion irradiation are associated with ion-induced structural changes of irradiated diamond obtained by the methods of Raman spectroscopy.