Simulations of electrical properties of cylindrical 3d-trench electrical si detectors under different radiation fluences and mip incident position

3rd International Conference on New Material and Chemical Industry

材料科学;化学工业

Kuang, F.L.^1^2^3^4^5 ; Li, Z.^1^2^3^5 ; Long, Z.L.^4 ; Liu, M.W.^1^2^3^5

College of Materials Science and Engineering, Xiangtan University, Xiangtan, China^1

National-Provincial Laboratory of Special Function Thin Film Materials, China^2

Center for Semiconductor Particle Photon Imaging Detectors Development and Fabrication, Xiangtan University, China^3

College of Civil Engineering and Mechanics, Xiangtan Univerrsity, Xiangtan, China^4

Hunan Zheng Xin Micro Detectors Limited, Xiangtan, China^5

关键词: Charge collection;    Fluences;    Irradiated detectors;    Minimum ionizing particles;    Radiation fluences;    Radiation induced defects;    Si detectors;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/479/1/012029/pdf
DOI  :  10.1088/1757-899X/479/1/012029

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

In this work, we investigate the dependence of charge collection on the MIP(minimum ionizing particle) incident position for cylindrical 3D-Trench electrode Si detectors being irradiated to various fluences. Simulation results are: (1) For non-irradiated detectors, detector charge collection does not depend on the MIP incident position, i.e. the charge collection is always a constant, there is no effect of trapping; (2) For irradiated detectors, detector charge collection depends on the MIP incident position; (3) As radiation fluence increases, detector charge collection decreases, regardless of MIP incident position. This is due to the fact that charge trapping by radiation induced defects also increases with radiation fluences, resulting in less charge collection.