Synthesis of n-type semiconductor diamond single crystal under high pressure and high temperature

1st International Conference on Frontiers of Materials Synthesis and Processing

材料科学;化学

Li, Yong^1 ; Li, Shangsheng^2 ; Song, Mousheng^1 ; She, Yanchao^1 ; Wang, Qiang^1 ; Guan, Xuemao^2

School of Physical and Applied Engineering, Ton Gren University, Ton Gren, China^1

School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo, China^2

关键词: Boron-doping;    Characteristic peaks;    Co-doped;    Diamond single crystals;    Hall effect measurement;    High pressure and high temperature;    N-type semiconductors;    Temperature range;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/274/1/012131/pdf
DOI  :  10.1088/1757-899X/274/1/012131

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

In this paper, diamond single crystal co-doped with sulfur and boron was successfully synthesized at the fixed pressure of 6.0 GPa and temperature range of 1535 K. Sulfur was detected in the co-doped diamond by Fourier Transform Infrared Spectroscopy (FTIR) and the corresponding characteristic peak located at 848 cm-1. Interestingly, Hall effect measurements indicated that the diamond co-doped with sulfur and boron exhibited n-type semiconductor behaviour. Furthermore, the Hall mobility and carrier concentration of the co-doped diamond higher than those of the boron-doping diamond.