The efficiency of GaN/AlGaN p-n heterostructures in UV spectral range

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Kurin, S. Yu^1 ; Usikov, A.S.^2,3 ; Papchenko, B.P.^2 ; Helava, H.^3 ; Makarov, Yu N.^1,3 ; Evseenkov, A.S.^4 ; Tarasov, S.A.^4 ; Solomonov, A.V.^4

Nitride Crystals -AlN Ltd., pr. Engel'sa 27, St. Petersburg

194156, Russia^1

University ITMO, Kronverkskiy pr. 49, St. Petersburg

197101, Russia^2

Nitride Crystals Inc., 181 E Industry Court, Deer Park

NY

11729, United States^3

Saint-Petersburg Electrotechnical University LETT, 5 Prof. Popov Str., St. Petersburg

197376, Russia^4

关键词: Active regions;    Light extraction;    Model-based OPC;    Operating currents;    Optical power;    Peak wavelength;    Surface interfaces;    UV spectral ranges;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012107/pdf
DOI  :  10.1088/1742-6596/741/1/012107

来源: IOP

【 摘 要 】

GaN/AlGaN p-n heterostructures emitting in UV spectral range obtained by HVPE approach were investigated. It was shown that the peak wavelength of UV LEDs was in the range of 360-380 nm with FWHM of 10-13 nm. At operating current of 20 mA, the active region temperature Tjwas 43°C, the output optical power and efficiency - 1.14 mW and 1.46%, respectively. The model based on corpuscular Monte Carlo method for calculation of the light extraction index was presented. The simulation results allow us to propose the ways to increase the efficiency of UV LEDs: surface interfaces texturing, optimization of the design of heterostructures, and the use of lenses.