Self-induced GaN nanowire growth: surface density determination

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Koryakin, A.A.^1,2 ; Repetun, L.^1 ; Sibirev, N.V.^1,2 ; Dubrovskii, V.G.^1,2

St. Petersburg Academic University, 8/3 Khlopina, St.Petersburg

194021, Russia^1

ITMO University, 49 Kronverkskiy pr., St. Petersburg

197101, Russia^2

关键词: Gallium flux;    GaN islands;    GaN nanowires;    Growth time;    Nanowire surface;    Numerical approaches;    Surface density;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012032/pdf
DOI  :  10.1088/1742-6596/741/1/012032

来源: IOP

【 摘 要 】

A new numerical approach for the determination of the GaN nanowire surface density on an AlN/Si substrate as a function of the growth time and gallium flux is presented. Within this approach, the GaN island solid-like coalescence and island-nanowire transition are modeled by the Monte-Carlo method. We show the importance of taking into consideration the island coalescence for explaining that the maximum of GaN island surface density is several times larger than the maximum of GaN nanowire surface density. Also, we find that the nanowire surface density decreases with an increase of the gallium flux.