Grain size and doping effect on structure and electromechanical properties of polycrystalline silicon for MEMS applications

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Ageev, O.A.^1 ; Gusev, E.Yu.^1 ; Jityaeva, J.Y.^1 ; Ilina, M.V.^1 ; Bykov, Al V.^1

Southern Federal University, Institute of Nanotechnology, Electronics and Electronic Equipment Engineering, Taganrog

347922, Russia^1

关键词: Electromechanical property;    Grain size effect;    MEMS applications;    Nanoindentation experiments;    Nanomechanical device;    Particle diameters;    Polysilicon layers;    Theoretical values;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012001/pdf
DOI  :  10.1088/1742-6596/741/1/012001

来源: IOP

【 摘 要 】

Grain size effect on microhardness and Young modulus of polysilicon layers was obtained by nanoindentation experiments: 14.1-16.3 GPa and 240-300 GPa, respectively, for the particle-diameter of 117-430 nm. The range of grain size correlated to mechanical properties exceed theoretical values was defined. The doping effect was considered. The grain size range of PECVD polysilicon with aspects of hardening and suitable conductivity is presented with the objective to formation of micro- and nanomechanical devices.