Laser processing for bevel termination of high voltage pn junction in SiC

International Conference on Microtechnology and Thermal Problems in Electronics 2015; International Conference on Smart Engineering of New Materials 2015

Kubiak, A.^1 ; Ruta, L.^1 ; Rosowski, A.^2,3 ; French, P.^2

Department of Semiconductor and Optoelectronic Devices, Lodz University of Technology, Wolczanska 211/215, Lodz

90-924, Poland^1

General Engineering Research Institute (GERI), Liverpool John Moore University, Byrom Street, Liverpool

L3 3AF, United Kingdom^2

SPI Lasers, 3 Wellington Park, Tollbar Way, Hedge End, Southampton, Hampshire

SO30 2QU, United Kingdom^3

关键词: Discrete devices;    Edge termination;    High potential;    High voltage;    Laser process;    Mechanical machining;    Reverse polarization;    Sample holders;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/709/1/012005/pdf
DOI  :  10.1088/1742-6596/709/1/012005

来源: IOP

【 摘 要 】

Proper edge termination of the p-n junction in silicon carbide is a key requirement in the fabrication of discrete devices able to withstand high voltages in reverse polarization. Due to the hardness of SiC the creation of the bevel termination remains difficult using mechanical machining. The use of laser beam sources with medium wavelength (532 nm) gives new possibilities in the machining of the silicon carbide. The paper presents the fabrication of the bevel termination structure in SiC using a green DPSS laser equipped with scanner and dedicated rotating sample holder. Characterization of the resulting structures proves the high potential of the proposed approach.