Electro-Thermal Analysis and Optimisation of Edge Termination of Power Diode Supported by 2-D/3-D Numerical Modelling and Simulation

Microtechnology and Thermal Problems in Electronics

物理学;无线电电子学

Príbytný, P.^1 ; Donoval, D.^1 ; Chvála, A.^1 ; Marek, J.^1 ; Molnár, M.^1

Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkoviova 3, Bratislva 812 19, Slovakia^1

关键词: Edge termination;    Forward currents;    Geometry optimization;    Modelling and simulations;    Reverse voltages;    Structure design;    Surge current;    Thermal device simulations;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/494/1/012003/pdf
DOI  :  10.1088/1742-6596/494/1/012003

来源: IOP

【 摘 要 】

Numerical modelling and simulation provide an efficient tool for analysis and optimization of device structure design. In this paper we present the analysis and the geometry optimization of the power module with high power pin diode structure supported by the advanced 2-D/3-D mixed-mode electro-thermal device simulation. The structure under investigation is P+NN+power diode device designed for high reverse voltages and very high forward currents, with a maximum forward surge current up to 2.7 kA.