Metamorphic InGaAs photo-converters on GaAs substrates

17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Rybalchenko, D.V.^1 ; Mintairov, S.A.^1 ; Salii, R.A.^1 ; Timoshina, N.K.^1 ; Shvarts, M.Z.^1 ; Kalyuzhnyy, N.A.^1

Ioffe Institute, 26 Polytekhnicheskaya str., St. Petersburg

194021, Russia^1

关键词: 1064 nm;    GaAs substrates;    In compositions;    Layer thickness;    Metamorphic buffers;    Metamorphic heterostructure;    Photoconverters;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/690/1/012032/pdf
DOI  :  10.1088/1742-6596/690/1/012032

来源: IOP

【 摘 要 】

Metamorphic heterostructure photoconverters (PC) based on InGaAs have been grown on GaAs substrates by the MOCVD technique. It has been shown that using the multilayer metamorphic buffer with layer thickness of 120 nm and In composition step of 2.5% provides a good quality of the bulk layers grown on the buffer with up to 24% of In. A PC with photosensitivity up to 1350 nm and the quantum efficiency of 80% in the range of 1050-1100 nm have been made. The 34.5% efficiency of laser radiation conversion at 1064 nm has been demonstrated.