Observation of linear I-V curves on vertical GaAs nanowires with atomic force microscope

17th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Geydt, P.^1 ; Alekseev, P.A.^2 ; Dunaevskiy, M.^2 ; Lähderanta, E.^1 ; Haggrén, T.^3 ; Kakko, J.-P.^3 ; Lipsanen, H.^3

Department of Mathematics and Physics, Lappeenranta University of Technology, P.O. Box 20, Lappeenranta

53851, Finland^1

Ioffe Physico-Technical Institute, RAS, Saint-Petersburg

194021, Russia^2

Department of Micro- and Nanosciences, Micronova, Aalto University, P.O. Box 13500, Aalto

FI-00076, Finland^3

关键词: Charge accumulation;    Electrical effects;    GaAs substrates;    Peak-force tappings;    Schottky barriers;    Semiconductor nanowire;    Single nanowires;    Substrate surface;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/661/1/012031/pdf
DOI  :  10.1088/1742-6596/661/1/012031

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

In this work we demonstrate the possibility of studying the current-voltage characteristics for single vertically standing semiconductor nanowires on standard AFM equipped by current measuring module in PeakForce Tapping mode. On the basis of research of eight different samples of p-doped GaAs nanowires grown on different GaAs substrates, peculiar electrical effects were revealed. It was found how covering of substrate surface by SiOxlayer increases the current, as well as phosphorous passivation of the grown nanowires. Elimination of the Schottky barrier between golden cap and the top parts of nanowires was observed. It was additionally studied that charge accumulation on the shell of single nanowires affects its resistivity and causes the hysteresis loops on I-V curves.