Mathematical modeling of piezoresistive elements

3rd International Congress on Mechanical Metrology

物理学;力学

Geremias, M.^1 ; Moreira, R.C.^1 ; Rasia, L.A.^1 ; Moi, A.^1

DCEEng, Department of Physical Sciences and Engineering, UNIJUI - Regional State University Northwest Rio Grande Do sul, 3000 Street of Commerce, Ijui, RS, Brazil^1

关键词: Impurities in;    Piezo-resistive;    Piezoresistive coefficients;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/648/1/012012/pdf
DOI  :  10.1088/1742-6596/648/1/012012

学科分类：力学，机械学

来源: IOP

【 摘 要 】

This article presents the longitudinal piezoresistive coefficients for thin film amorphous semiconductor type a-C:H. Experimental data and mathematical models have been used in computer simulations. The results show that a reduction of the longitudinal piezoresistive coefficient occurs due to the increased concentration of impurities in the films analyzed.