会议论文详细信息
3rd International Congress on Mechanical Metrology | |
Mathematical modeling of piezoresistive elements | |
物理学;力学 | |
Geremias, M.^1 ; Moreira, R.C.^1 ; Rasia, L.A.^1 ; Moi, A.^1 | |
DCEEng, Department of Physical Sciences and Engineering, UNIJUI - Regional State University Northwest Rio Grande Do sul, 3000 Street of Commerce, Ijui, RS, Brazil^1 | |
关键词: Impurities in; Piezo-resistive; Piezoresistive coefficients; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/648/1/012012/pdf DOI : 10.1088/1742-6596/648/1/012012 |
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学科分类:力学,机械学 | |
来源: IOP | |
【 摘 要 】
This article presents the longitudinal piezoresistive coefficients for thin film amorphous semiconductor type a-C:H. Experimental data and mathematical models have been used in computer simulations. The results show that a reduction of the longitudinal piezoresistive coefficient occurs due to the increased concentration of impurities in the films analyzed.
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