Improvement of interfacial and electrical properties of Al2O3/ n-Ga0.47In0.53As for III-V impact ionization MOSFETs

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Lechaux, Y.^1 ; Fadjie, A.^1 ; Bollaert, S.^1 ; Talbo, V.^2 ; Mateos, J.^2 ; González, T.^2 ; Vasallo, B.G.^2 ; Wichmann, N.^1

Institute of Electronics, Microelectronics and Nanotechnology, University of Lille 1, UMR 8520, Villeneuve d'Ascq

59652, France^1

Applied Physics Department, Salamanca University, Plaza de la Merced, s/n, Salamanca

37008, Spain^2

关键词: Charge control;    Different treatments;    Interface trap density;    Metal-oxide-semiconductor capacitors;    MOSFETs;    Plasma densification;    Semiconductor-oxide interface;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012062/pdf
DOI  :  10.1088/1742-6596/647/1/012062

来源: IOP

【 摘 要 】

In this work, Metal - Oxide - Semiconductor Capacitors (MOSCaps) based on Al2O3/ n-Ga0.47In0.53As interface have been studied. In order to have high MOSFETs performance, it is necessary to improve the semiconductor - oxide interface quality. It is observed that the (NH4)2S passivation shows lower interface trap density in the order of 6×1011cm-2.eV-1. Also, it is observed that O2plasma densification after a passivation in a NH4OH solution improves the electrical behaviour of the charge control. Low interface trap density in the order of 1×1012cm-2.eV-1was obtained for different treatments presented in this work.