Enhancement of sub-terahertz detection by drain-to-source biasing on strained silicon MODFET devices

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Meziani, Y.M.^1 ; Morozov, S.^2,4 ; Notario, J A Delgado^1 ; Maremyanin, K.^2 ; Velázquez, J.E.^1 ; Fobelets, K.^3

Departamento Físca Aplicada, Universidad de Salamanca, Salamanca

37008, Spain^1

Institute for Physics of Microstructures of Russian, Academy of Sciences GSP-105, Nizhny Novgorod

603950, Russia^2

Department of Electrical and Electronic Engineering, Imperial College, London

SW7 2AZ, United Kingdom^3

Lobachevsky State University of Nizhni Novgorod, 23 Gagarin Avenue, Nizhny Novgorod

603950, Russia^4

关键词: Backward-wave oscillators;    Drain-to-source voltages;    Gate length;    Non-resonant detection;    Photoresponses;    Source and drains;    Source biasing;    Sub-terahertz;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012007/pdf
DOI  :  10.1088/1742-6596/647/1/012007

来源: IOP

【 摘 要 】

We report on non resonant detection of sub-terahertz radiation (148-353 GHz) using strained silicon modulation field effect transistor with different gate lengths. The devices were excited at room temperature by a Backward Wave Oscillator (BWO) source. Enhancement of the photoresponse signal by drain-to-source bias was observed. Increasing drain-to-source voltage leads to asymmetry between the boundary conditions at the source and drain contacts.