Application of low-voltage backscattered electron imaging to the mapping of organic photovoltaic blend morphologies

Electron Microscopy and Analysis Group Conference 2015

Masters, R.C.^1 ; Wan, Q.^1 ; Zhou, Y.^2 ; Sandu, A.M.^3 ; Dapor, M.^4 ; Zhang, H.^2 ; Lidzey, D.G.^5 ; Rodenburg, C.^1

Department of Materials Science and Engineering, University of Sheffield, Sir Robert Hadfield Building, Mappin Street, Sheffield

SI 3JD, United Kingdom^1

School of Physics, Trinity College, Dublin 2, Ireland^2

FEI Co. Europe NanoPort, Achtsewag Noord 5, Eindhoven

5651 GG, Netherlands^3

ECT-FBK and TIFPA-INFN, via Sommarive 18, Trento

I-38123, Italy^4

Department of Physics and Astronomy, University of Sheffield, Hicks Building, Hounsfield Road, Sheffield

S3 7RH, United Kingdom^5

关键词: Backscattered electron imaging;    Backscattered electrons;    Blend morphology;    Commercialisation;    Nanoscale morphology;    Organic photovoltaic (OPV);    Organic photovoltaics;    Primary electron beams;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/644/1/012017/pdf
DOI  :  10.1088/1742-6596/644/1/012017

来源: IOP

【 摘 要 】

With organic photovoltaic (OPV) technology moving towards commercialisation, high-throughput analytical techniques are required to study the nanoscale morphology of OPV blends. We demonstrate a low-voltage backscattered electron imaging technique in the SEM that combines a solid-state backscattered electron detector with stage biasing to produce a rapid overview of the phase-separated surface morphology of an organic photovoltaic (P3HT:PCBM) blend. Aspects of obtaining the best possible results from the technique are discussed along with the possibility of probing the sub-surface morphology by altering the primary electron beam landing energy.