Temperature dependence of photoluminescence of GaAs/AlGaAs quantum rings

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Sibirmovsky, Yu.D.^1 ; Vasil'Evskii, I.S.^1 ; Vinichenko, A.N.^1 ; Eremin, I.S.^1 ; Kolentsova, O.S.^1 ; Kargin, N.I.^1 ; Strikhanov, M.N.^1

National Research Nuclear University MEPhI, Moscow

115409, Russia^1

关键词: Different shapes;    Droplet epitaxy;    GaAs/AlGaAs;    Ground-state energies;    Photoluminescence spectrum;    Quantum ring;    Temperature dependence;    Temperature increase;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012073/pdf
DOI  :  10.1088/1742-6596/643/1/012073

来源: IOP

【 摘 要 】

Samples with arrays of GaAs/AlGaAs quantum rings (QRs) of different shapes were grown by molecular beam epitaxy in droplet epitaxy mode. Photoluminescence (PL) spectra of the samples were measured at 20 - 90 K and 300 K, intense peaks attributed to the QR layers were observed. The peaks were identified by comparison of as-grown and selectively etched samples and by the calculation of the ground state energy for charge carriers in GaAs QRs. FWHM narrowing with the temperature increase was observed below 70 K.