Intersubband absorption modulation in the GaAs/AlGaAs double tunnel-coupled quantum wells

16th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Rybalko, D.A.^1 ; Vinnichenko, M Ya^1 ; Vorobjev, L.E.^1 ; Firsov, D.A.^1 ; Balagula, R.M.^1 ; Kulagina, M.M.^2 ; Vasil'Iev, A.P.^2

Department of Physics of Semiconductors and Nanoelectronics, St. Petersburg Polytechnic University, 29 Polytechnicheskaya str., St.-Petersburg

195251, Russia^1

Ioffe Physical-Technical Institute, 26 Polytechnicheskaya str., St.-Petersburg

194021, Russia^2

关键词: Coupled quantum well;    Double tunnels;    GaAs/AlGaAs;    GaAs/AlGaAs quantum well;    Intersubband absorption;    Photoluminescence measurements;    Temperature modulation;    Transverse electric field;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/586/1/012012/pdf
DOI  :  10.1088/1742-6596/586/1/012012

来源: IOP

【 摘 要 】

Structures with multiple doped double tunnel-coupled GaAs/AlGaAs quantum wells were grown and formed in mesa configuration. Positions of the energy levels have been verified with interband photoluminescence measurements. Temperature modulation of the intersubband absorption spectra was registered. Intersubband absorption modulation under transverse electric field was detected and explained.