Electrophysical properties of PCM-materials in crystalline and amorphous states

16th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Gaydamaka, A.V.^1 ; Martynova, O.A.^1 ; Vladimirskaya, E.V.^1 ; Gasumyants, V.E.^1

Saint Petersburg Polytechnic University, 29 Polytechnicheskaya str., St.-Petersburg

195251, Russia^1

关键词: Amorphous state;    Conduction process;    Crystalline state;    Electrophysical properties;    High temperature range;    Nernst coefficients;    Positive value;    Temperature dependence;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/586/1/012009/pdf
DOI  :  10.1088/1742-6596/586/1/012009

来源: IOP

【 摘 要 】

The temperature dependences of the resistivity, thermopower, and Nernst coefficient were experimentally investigated on the samples of phase change materials with a composition of Ge0.15Sb0.85in both the amorphous and crystalline states. It was observed that the crystalline state is characterized by a metallic type of the thermopower temperature dependences, while the resistivity increases slightly with decreasing temperature and the Nernst coefficient has a positive value and demonstrates the complicated temperature dependence. The conductivity in the amorphous state has an activated character with two different activation energies in low and high temperature ranges; the temperature of the transition between these ranges corresponds to the point of a change of thermopower sign. The results obtained point to a need to take into account a contribution of two types of carriers in the conduction process in both phase states.