Analysis of thermally stimulated processes in new phenanthroline derivatives suitable for optoelectronic devices

6th International Workshop on Multi-Rate Processes and Hysteresis

Prelipceanu, Marius^1 ; Cojocariu, Lucian^1 ; Graur, Adrian^1 ; Schrader, Sigurd^2

Faculty of Electrical and Computer Engineering, Stefan Cel Mare University, Suceava

720229, Romania^1

Department of Physics Engineering, University of Applied Sciences, Wildau, Germany^2

关键词: Charge transport mechanisms;    Electronic band structure;    Elementary process;    Phenanthroline derivatives;    Phenanthrolines;    Thermally stimulated discharge currents;    Thermally stimulated luminescence;    Thermally stimulated process;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/585/1/012011/pdf
DOI  :  10.1088/1742-6596/585/1/012011

来源: IOP

【 摘 要 】

Thermally stimulated processes have been studied in thin films of phenanthroline derives to describe the states that had been localized. Ultraviolet Photoelectron Spectroscopy had checked out before thin films of new pyrrolo[l,2-a][l,10] phenanthroline derivatives [1], in order to further applications in optoelectronic devices. The investigated compounds have an electronic band structure which is due to the substituent (R=NO2, Cl) induced transformations of molecular orbitals. Thermally stimulated discharge currents (TSDC) attested dipolar and charge transport mechanisms. Each TSDC peak has been assigned to elementary processes that are different utilizing in addition dielectric spectroscopy (DES), and the mean trap depths have been approximated from thermally stimulated luminescence (TSL) curves.