Leakage currents mechanism in thin films of ferroelectric Hf0.5Zr0.5O2

33rd International Conference on the Physics of Semiconductors

Islamov, Damir R.^1,2 ; Chernikova, A.G.^3 ; Kozodaev, M.G.^3 ; Markeev, A.M.^3 ; Perevalov, T.V.^1,2 ; Gritsenko, V.A.^1,2 ; Orlov, O.M.^4

Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk

630090, Russia^1

Novosibirsk State University, Novosibirsk

630090, Russia^2

Moscow Institute of Physics and Technology, Dolgoprudniy

141700, Russia^3

JSC Molecular Electronics Research Institute, Zelenograd, Moscow

124460, Russia^4

关键词: Ab initio simulations;    Charge transport mechanisms;    Optical trap;    Phonon assisted;    Transport mechanism;    Trap density;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012002/pdf
DOI  :  10.1088/1742-6596/864/1/012002

来源: IOP

【 摘 要 】

We study the charge transport mechanism in ferroelectric Hf0.5Zr0.5O2thin films. Transport properties of Hf0.5Zr0.5O2are described by phonon-assisted tunnelling between traps. Comparison with transport properties of amorphous Hf0.5Zr0.5O2demonstrates that the transport mechanism does not depend on the structure. The thermal and optical trap energies 1.25 eV and 2.5 eV, respectively, in Hf0.5Zr0.5O2were determined based on comparison of experimentally measured data on transport with simulations within phonon-assisted tunnelling between traps. We found that the trap density in ferroelectric Hf0.5Zr0.5O2is slightly less than one in amorphous Hf0.5Zr0.5O2. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2is confirmed by ab initio simulation of electronic structure.