Impurity states and Localization in Bilayer Graphene: the Low Impurity Concentration Regime

27th International Conference on Low Temperature Physics

Collado, H P Ojeda^1 ; Usaj, Gonzalo^1 ; Balseiro, C.A.^1

Centro Atómico Bariloche, Instituto Balseiro, Comisión Nacional de Energía Atómica, CONICET, Bariloche

8400, Argentina^1

关键词: Bilayer Graphene;    Dirac point;    Gate field;    Impurity state;    Local density of state;    Low impurity concentrations;    Non-magnetic impurities;    Strong localizations;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/568/5/052003/pdf
DOI  :  10.1088/1742-6596/568/5/052003

来源: IOP

【 摘 要 】

We study the problem of non-magnetic impurities adsorbed on bilayer graphene in the diluted regime. We analyze the impurity spectral densities for various concentrations and gate fields. We also analyze the effect of the adsorbate on the local density of states (LDOS) of the different C atoms in the structure and present some evidence of strong localization for the electronic states with energies close to the Dirac point.