Theory of plasmonic terahertz detection by a dual-grating-gate field-effect transistor

2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies

Fateev, Denis V.^1 ; Popov, Vyacheslav V.^1 ; Nikitov, Sergey A.^1

Kotelnikov Institute of Radio Engineering and Electronics of RAS, Saratov State University, Russia^1

关键词: Asymmetric unit;    DC-bias current;    Dual gratings;    Gate field;    Responsivity;    Terahertz detection;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/486/1/012022/pdf
DOI  :  10.1088/1742-6596/486/1/012022

来源: IOP

【 摘 要 】

Plasmonic terahertz detection in a dual-grating-gate field-effect transistor structure with an asymmetric unit cell is studied theoretically and modeled numerically. It is shown that DC bias current flowing in the structure channel strongly affects the detector responsivity.