The properties of photoconductivity of the Ila-type diamond related to the band gap structure

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Altukhov, A.A.^1,2 ; Feshchenko, V.S.^1,3 ; Shepelev, V.A.^1,3 ; Popov, A.V.^1

Ltd Industrial-Technological Center UralAlmazInvest, 4 I. Franko st., Moscow

121108, Russia^1

Federal State Budget Educational Institution, Higher Education Moscow Technological University, 78 Vernadsky Avenue, Moscow

119454, Russia^2

JSC Central Scientific-Research Institute of Technology Tekhnomash, 4 I. Franko st., Moscow

121108, Russia^3

关键词: Band gap structure;    Complicated structures;    Impurity state;    Natural diamonds;    Nitrogen impurity;    Structural defect;    Two photon absorption;    UV photodetectors;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012099/pdf
DOI  :  10.1088/1742-6596/741/1/012099

来源: IOP

【 摘 要 】

We investigate the properties of the photosensitivity spectra of the UV photodetectors based on natural diamond. The effect of the structural defects associated with nitrogen impurities to the photosensitivity is analyzed. We confirm that the polychrome light bias application enhances the photosensitivity of these detectors in the spectral range 240-340 nm due to the quasi-two-photon absorption which originates due to the complicated structure of the band gap impurity states of a natural diamond. The possibility to influence the photosensitivity spectra in the λ