Chemical vapor deposition of a-CNx:H films for electron field emission using band supermagnetron plasma

26th Symposium on Plasma Sciences for Materials

物理学;材料科学

Kinoshita, H.^1 ; Yagi, S.^1

Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan^1

关键词: Double layers;    Electron field emission;    Gas concentration;    High deposition rates;    Low thresholds;    Magnetron plasmas;    Si substrates;    Supermagnetron plasma;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/518/1/012004/pdf
DOI  :  10.1088/1742-6596/518/1/012004

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

A supermagnetron plasma apparatus with two band magnetron cathodes, which can form uniform magnetron plasma under a stationary magnetic field (about 160 G), was used to deposit a-CNx:H films at N2 gas concentrations of 0 and 70%. A high deposition rate of about 85±5 nm/min was obtained at a low dc self-bias voltage, between -20 and -62 V. The optical band gap could be controlled between 1.1 and 3.8 eV. The double-layer a-CNx:H films with optical band gaps of 2.2 eV (upper layer; N2 0%) and 1.5 eV (lower layer; N2 70%) formed on p-Si substrate showed a low-threshold-emission electric field of 9 V/μm.