Realization of point contact for stacks Al2O3/SiNx rear surface passivated solar cells

6th Global Conference on Materials Science and Engineering

Wang, S.J.^1,2 ; Jin, G.J.^1 ; Wang, L.L.^1 ; Zuo, Z.^3 ; Meng, Y.L.^1 ; Zhao, Y.^4 ; Jin, S.Z.^1

College of Optics and Electronic Technology, Chia Jiliang University, Hangzhou, China^1

Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), University of Technology of Troyes, Troyes, France^2

Department of Physics, University of Toronto, Toronto

ON

M5S1A7, Canada^3

State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun, China^4

关键词: Back surface fields;    Double layers;    Sintering effect;    Sintering process;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/283/1/012030/pdf
DOI  :  10.1088/1757-899X/283/1/012030

来源: IOP

【 摘 要 】

A simple locally-sintered process for realizing rear point contacts of the Passivated emitter and rear cells, of which rear surface is passivated by Al2O3/SiNxdouble layers, is demonstrated in this paper. As compared to conventional cells passivated by aluminium back surface field, the cells show higher open circuit voltage and short circuit current. The sintering effect on the final passivation quality of stacks Al2O3/SiNxduring the sintering process is investigated and discussed in detail.