Influence of the structural inhomogeneity on the luminescent properties of nitride multiple quantum wells grown by MOCVD

18th International Summer School on Vacuum, Electron and Ion Technologies

Asenova, I.S.^1 ; Valcheva, E.P.^1 ; Kirilov, K.^1 ; Poturlyan, A.^1

Faculty of Physics, St. Kliment Ohridski University of Sofia, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria^1

关键词: Green regions;    Luminescent property;    Peak-splitting;    Structural inhomogeneities;    T-matrix formalism;    Theoretical calculations;    Theoretical modeling;    Thickness fluctuations;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/514/1/012054/pdf
DOI  :  10.1088/1742-6596/514/1/012054

来源: IOP

【 摘 要 】

We investigated GaN/InGaN multiple quantum wells grown by MOCVD for LED application in the blue and green regions. The sample considered was characterized by a significant number of defects on the interfaces between the layers. We examined the heterostructure by means of cathodoluminescence. Due to the composition and the layer's thickness fluctuations on a small and a large scale, we observed peak splitting and broadening. In order to justify our assumption, we compared the experimental results with our theoretical calculations. The theoretical model used is based on the T-matrix formalism.