33rd International Conference on the Physics of Semiconductors | |
Emission characteristics of high-gain GaN-based Vertical-Cavity Surface-Emitting Lasers | |
Weng, Guoen^1 ; Chen, Shaoqiang^1 ; Ito, Takashi^2 ; Akiyama, Hidefumi^2 ; Hu, Xiaobo^1 ; Zhang, Baoping^3 | |
Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai | |
200241, China^1 | |
Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Chiba, Kashiwa | |
277-8581, Japan^2 | |
Department of Electronic Engineering, Xiamen University, 422 South Siming Road, Xiamen, Fujian | |
361005, China^3 | |
关键词: Emission characteristics; Gain-switched; Green regions; High optical gain; InGaN/GaN quantum well; Ingan/gan qws; Measurement system; Up conversion; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012083/pdf DOI : 10.1088/1742-6596/864/1/012083 |
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来源: IOP | |
【 摘 要 】
GaN-based vertical-cavity surface-emitting lasers (VCSELs) with high optical gain and short cavity lifetime are favorable for the generation of ultra-short pulses in the blue and green regions. In our previous works, 6 and 2 picosecond short-pulses have been generated from gain-switched InGaN VCSELs with 3- and 10-period InGaN/GaN quantum wells (QWs) in the active layers by using an up-conversion measurement system. To further increase the gain of the VCSEL for the generation of even shorter pulses, 20-period InGaN/GaN QWs samples were fabricated. The emission characteristics of these high-gain VCSELs were investigated and analyzed under the optical pumping at room temperature.
【 预 览 】
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Emission characteristics of high-gain GaN-based Vertical-Cavity Surface-Emitting Lasers | 404KB | download |