Emission characteristics of high-gain GaN-based Vertical-Cavity Surface-Emitting Lasers

33rd International Conference on the Physics of Semiconductors

Weng, Guoen^1 ; Chen, Shaoqiang^1 ; Ito, Takashi^2 ; Akiyama, Hidefumi^2 ; Hu, Xiaobo^1 ; Zhang, Baoping^3

Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai

200241, China^1

Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Chiba, Kashiwa

277-8581, Japan^2

Department of Electronic Engineering, Xiamen University, 422 South Siming Road, Xiamen, Fujian

361005, China^3

关键词: Emission characteristics;    Gain-switched;    Green regions;    High optical gain;    InGaN/GaN quantum well;    Ingan/gan qws;    Measurement system;    Up conversion;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012083/pdf
DOI  :  10.1088/1742-6596/864/1/012083

来源: IOP

【 摘 要 】

GaN-based vertical-cavity surface-emitting lasers (VCSELs) with high optical gain and short cavity lifetime are favorable for the generation of ultra-short pulses in the blue and green regions. In our previous works, 6 and 2 picosecond short-pulses have been generated from gain-switched InGaN VCSELs with 3- and 10-period InGaN/GaN quantum wells (QWs) in the active layers by using an up-conversion measurement system. To further increase the gain of the VCSEL for the generation of even shorter pulses, 20-period InGaN/GaN QWs samples were fabricated. The emission characteristics of these high-gain VCSELs were investigated and analyzed under the optical pumping at room temperature.