Structural and defect characterization of Gd-doped GaN films by X-ray diffraction and positron annihilation

13th International Workshop on Slow Positron Beam Techniques and Applications

Yabuuchi, A.^1 ; Oshima, N.^1 ; O'Rourke, B.E.^1 ; Suzuki, R.^1 ; Ito, K.^1 ; Sano, S.^2 ; Higashi, K.^2 ; Zhou, Y.-K.^2 ; Hasegawa, S.^2

National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba Ibaraki 305-8568, Japan^1

Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan^2

关键词: C-axis direction;    Defect characterization;    Ga-rich conditions;    Lattice distortions;    Lattice expansion;    Positron lifetime;    Rich conditions;    Slow positron beam;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/505/1/012023/pdf
DOI  :  10.1088/1742-6596/505/1/012023

来源: IOP

【 摘 要 】

Molecular-beam-epitaxy-grown Ga1-xGdxN films were investigated by X-ray diffraction and slow positron beams. From the positron lifetime results, N-vacancy-related defects may be expected in the Ga0.9Gd0.1N film grown under Ga-rich conditions which exhibits a lattice expansion in the c-axis direction. In contrast, Ga vacancies more than 1019cm-3were detected in the Ga0.9Gd0.1N film grown under N-rich conditions which does not exhibit the lattice expansion, implying that the highly-concentrated Ga vacancies contribute to a relaxation of the lattice distortion caused by incorporating oversized Gd atoms.