Variation of critical current and n-value of 2G HTS tapes in external magnetic fields of different orientation

2nd Conference on Plasma & Laser Research and Technologies

Sychugov, V.V.^1,3 ; Degtyarenko, P.N.^1,2 ; Ovcharov, A.V.^1 ; Shavkin, S.V.^1 ; Kruglov, V.S.^1 ; Vasiliev, A.L.^1 ; Volkov, P.V.^1 ; Chesnokov, Yu.M.^1

National Research Centre, Kurchatov Institute, Akademika Kurchatova pl. 1, Moscow

123182, Russia^1

Joint Institute for High Temperatures, Russian Academy of Sciences, Izhorskaya st. 13 Bd.2, Moscow

125412, Russia^2

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe sh. 31, Moscow

115409, Russia^3

关键词: Angular dependence;    C-axis direction;    External magnetic field;    Fabrication technique;    High temperature;    Metal-organic chemical vapour depositions;    Second generation;    Structural defect;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/747/1/012048/pdf
DOI  :  10.1088/1742-6596/747/1/012048

来源: IOP

【 摘 要 】

The in-field orientation dependence of critical current and n-value in second generation high temperature superconductive tapes was investigated. The samples were manufactured by Metalorganic Chemical Vapour Deposition method with BaZrO3inclusions (SuperPower Inc.) and Pulsed Laser Deposition method (Bruker HTS). For samples of each kind of fabrication techniques we observed higher critical current value in the case of external magnetic field aligned along (or nearby) c-axis direction in comparison with one aligned along ab-plane. We analysed possible reasons for this effect. Angular dependences of the critical current and n-value were investigated. The microstructure images of superconductive layer of studied samples show tilt of BaZrO3nanorods in MOCVD sample and high density of structural defects for PLD sample.