Three-Dimensional Electro-Thermal Verilog-A Model of Power MOSFET for Circuit Simulation

Microtechnology and Thermal Problems in Electronics

物理学;无线电电子学

Chvála, A.^1 ; Donoval, D.^1 ; Marek, J.^1 ; Príbytný, P.^1 ; Molnár, M.^1 ; Mikolasek, M.^1

Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, Ilkoviova 3, 812 19 Bratislava, Slovakia^1

关键词: Circuit modeling;    MOSFET modeling;    Multipulses;    Power devices;    Thermal equivalents;    Unclamped inductive switching;    Verilog-a models;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/494/1/012006/pdf
DOI  :  10.1088/1742-6596/494/1/012006

来源: IOP

【 摘 要 】

New original circuit model for the power device based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a three-dimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit simulations with distributed properties and three-dimensional thermal equivalent network is used for simulation of multipulse unclamped inductive switching (UIS) test of device robustness. The features and the limitations of the new model are analyzed and presented.