Polarization doping technology towards high performance GaN-based heterostructure devices

3rd International Conference on New Material and Chemical Industry

材料科学;化学工业

Wei, J.^1 ; Ouyang, D.F.^1 ; Deng, S.Y.^1 ; Peng, F.^1 ; Yang, C.^1 ; Luo, X.R.^1

School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan, China^1

关键词: AlGaN layers;    Bulk doping;    Donor/acceptor;    GaN based;    Heterostructure devices;    High conductivity;    Polarization doping;    Power devices;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/479/1/012052/pdf
DOI  :  10.1088/1757-899X/479/1/012052

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

GaN-based III-V heterostructure devices are promising candidates in future power electronic, microwave and optoelectronic devices, owing to their superior material properties. The development of polarization doping technology in GaN-based material has attracted extensive interests in the recent years, because it allows the graded AlGaN layers to realize high conductivity n/p type bulk doping without introducing donor/acceptor dopants, which would significantly improve the performances of the GaN-based heterostructure devices. This lecture contains two parts: an overview of polarization doping technology and novel polarization-doped GaN-based electron devices. The review of polarization doping technology mainly focuses on its mechanism in realizing the n/p type doping in graded AlGaN layer without impurity dopants, and its unique carrier characteristics induced by polarization doping. The novel polarization-doped GaN-based power devices include the diodes and field effect transistors, which exhibit better performances than the ones with impurity-doped.