Visible light emission from Krq+ ion-bombarded GaAs surface

28th International Conference on Photonic, Electronic and Atomic Collisions

Qiu-Mei, Xu^1 ; Zhi-Hu, Yang^1 ; Ye-Hong, Wu^1,2 ; Zhang-Yong, Song^1,2 ; Yi-Pan, Guo^1,2

Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, Gansu

730000, China^1

Graduate University of Chinese Academy of Sciences, Beijing

100049, China^2

关键词: Charge state;    GaAs surfaces;    Spectral line;    Visible light emission;    Wavelength ranges;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/488/13/132025/pdf
DOI  :  10.1088/1742-6596/488/13/132025

来源: IOP

【 摘 要 】

The visible light emission spectra from gallium arsenide surface are measured at different charge states of incident ion in the wavelength range 300-700nm. For 340keV Krq+(q=17, 15) ions bombarded the GaAs surface, the experimental results show that intensities of spectral lines are related closely with the projectile potential energy.