Thermal roughening of GaAs surface by dislocation-induced step-flow sublimation

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Akhundov, I.O.^1,2 ; Kazantsev, D.M.^1,2 ; Kozhuhov, A.S.^1 ; Alperovich, V.L.^1,2

Rzhanov Institute of Semiconductor Physics, Novosibirsk

630090, Russia^1

Novosibirsk State University, Novosibirsk

630090, Russia^2

关键词: Annealing condition;    Epitaxial GaAs;    Flat surfaces;    GaAs surfaces;    Step flow;    Surface-roughening;    Thermal roughening;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012042/pdf
DOI  :  10.1088/1742-6596/741/1/012042

来源: IOP

【 摘 要 】

The thermal roughening of epitaxial GaAs film surface is studied under anneals at temperatures 700-775 °C in the presence of a saturated Ga-As melt. Surface roughening consists in the formation of spiral "inverted pyramids" on the initially flat surface due to the step-flow sublimation induced by screw dislocations. The observed roughening indicates that, despite the presence of As and Ga vapors provided by the melt, the annealing conditions are shifted from equilibrium towards sublimation.