Electron dynamics at GaAs-AlGaAs heterojunction studied by ultrafast spectroscopy

16th International Youth Scientific School 'Actual Problems of Magnetic Resonance and its Applications'

Leontyev, A.V.^1 ; Ivanin, K.V.^1 ; Mitrofanova, T.G.^1 ; Lobkov, V.S.^1 ; Samartsev, V.V.^1,2

Zavoisky Physical-Technical Institute, 10/7 Sibirsky tract, 420029 Kazan, Russia^1

Kazan Federal University, 18 Kremlyovskaya st., Kazan 420008, Russia^2

关键词: Electron diffusion coefficient;    Electron dynamics;    Optical set-up;    Photoexcited electrons;    Semiconductor spintronics;    Spin diffusion coefficients;    Transient grating;    Ultra-fast spectroscopies;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/478/1/012020/pdf
DOI  :  10.1088/1742-6596/478/1/012020

来源: IOP

【 摘 要 】

In this letter the electron and spin dynamics at GaAs/AlGaAs heterojunction was studied by ultrafast spectroscopy techniques (photon echo and transient grating studies). Relaxation times and diffusion coefficients of photoexcited electrons and spins were obtained using pure optical setup. The estimated spin diffusion coefficient value of 160 cm2/s is relatively high and comparable to the electron diffusion coefficient of 200 cm2/s. This feature makes GaAs/AlGaAs heterosructure a promising material for practical application in semiconductor spintronics.