Electron Diffusion Model Based on I-V Data Fitting as the Calculation Method for DSSC Internal Parameters

International Conference on Condensed Matters and Advanced Materials 2018

Diantoro, Markus^1^2 ; Solehudin^1 ; Hidayat, Arif^1^2 ; Imam Supardi, Z.A.^3 ; Budi, Setia^4

Department of Physics, Mathematics and Natural Sciences Faculty, Universitas Negeri Malang, Jl. Semarang

65145, Indonesia^1

Center of Advanced Materials for Renewable Energy (CAMRY), Universitas Negeri Malang, Jl. Semarang

65145, Indonesia^2

Department of Physics, Faculty of Mathematics and Sciences, Universitas Negeri Surabaya, Jl. Semarang

65145, Indonesia^3

Department of Chemistry, Faculty of Mathematics and Natural Sciences, Universitas Negeri Jakarta, Jl. Rawamangun muka, Jakarta Timur

13220, Indonesia^4

关键词: Data fittings;    Electron diffusion;    Electron diffusion coefficient;    Internal parameters;    Photo-anodes;    Photon absorptions;    Solar simulator;    Suitable conditions;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/515/1/012016/pdf
DOI  :  10.1088/1757-899X/515/1/012016

来源: IOP

【 摘 要 】

Dye-sensitized solar cells (DSSC) made of TiO2 have received considerable attention from many researchers for the last three decades. Rapid theoretical and experimental studies have been conducted to improve the performance of DSSC. To understand the DSSC internal parameters, we need to fine-tune each component and identify the suitable conditions in optimizing the performance of assembled devices. In this work, we analyzed and calculated of several parameters the DSSC photoanode, e.g. Electron diffusion and photon absorption coefficients. The experimental I-V data from solar simulator measurements were fitted base on electron diffusion model using Microcal Origin software. We compared the photon absorption coefficient values from this calculation method with the result of UV-Vis measurement and compared the electron diffusion coefficient values with the result of the SEM image data fitting calculation method. It was apparent that the results of I-V data fitting calculation method were comparable with the results of two other techniques.