期刊论文详细信息
JOURNAL OF COMPUTATIONAL PHYSICS 卷:252
Simulation of ultra-relativistic electrons and positrons channeling in crystals with MBN EXPLORER
Article
Sushko, Gennady B.1,2  Bezchastnov, Victor G.2  Solov'yov, Ilia A.1,3  Korol, Andrei V.2,4  Greiner, Walter2  Solov'yov, Andrey V.1,2 
[1] VINF, Brussels, Belgium
[2] Goethe Univ Frankfurt, Frankfurt Inst Adv Studies, D-60438 Frankfurt, Germany
[3] Univ Illinois, Beckman Inst Adv Sci & Technol, 405 N Mathews Ave, Urbana, IL 61801 USA
[4] St Petersburg State Maritime Univ, St Petersburg 198262, Russia
关键词: Channeling in crystals;    Ultra-relativistic dynamics;    Molecular dynamics;    Electron dynamics;   
DOI  :  10.1016/j.jcp.2013.06.028
来源: Elsevier
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【 摘 要 】

A newly developed code, implemented as a part of the MBN EXPLORER package (Solov'yov et al., 2012; http://www.mbnexplorer.com/, 2012) [1,2] to simulate trajectories of an ultra-relativistic projectile in a crystalline medium, is presented. The motion of a projectile is treated classically by integrating the relativistic equations of motion with account for the interaction between the projectile and crystal atoms. The probabilistic element is introduced by a random choice of transverse coordinates and velocities of the projectile at the crystal entrance as well as by accounting for the random positions of the atoms due to thermal vibrations. The simulated trajectories are used for numerical analysis of the emitted radiation. Initial approbation and verification of the code have been carried out by simulating the trajectories and calculating the radiation emitted by epsilon = 6.7 GeV and epsilon = 855 MeV electrons and positrons in oriented Si(110) crystal and in amorphous silicon. The calculated spectra are compared with the experimental data and with predictions of the Bethe-Heitler theory for the amorphous environment. (C) 2013 Elsevier Inc. All rights reserved.

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