Atomic-scale characterization of (mostly zincblende) compound semiconductor heterostructures

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Smith, David J.^1,2 ; Aoki, T.^3 ; Furdyna, J.K.^4 ; Liu, X.^4 ; McCartney, M.R.^1,2 ; Zhang, Y.-H.^2,5

Department of Physics, Arizona State University, Tempe, AZ 85287, United States^1

Center for Photonics Innovation, Arizona State University, Tempe, AZ 85287, United States^2

LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ 85287, United States^3

Department of Physics, University of Notre Dame, Notre Dame, IN 46556, United States^4

School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, United States^5

关键词: Aberration-corrected electron microscopy;    Atomic columns;    Compound material;    Compound semiconductors;    Image filtering;    Interfacial strain;    Residual strains;    Semiconductor heterostructures;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012005/pdf
DOI  :  10.1088/1742-6596/471/1/012005

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

This paper provides an overview of our recent atomic-scale studies of semiconductor heterostructures, based primarily on combinations of zincblende compound materials grown by molecular beam epitaxy. Interfacial strain due to lattice mismatch inevitably causes growth defects to be introduced. Analysis of defect type and distribution using image filtering allows residual strain to be estimated. Exploratory investigations using aberration-corrected electron microscopy, which enables individual atomic columns to be resolved, are also described.