Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices

SCRIPTA MATERIALIA

卷:128

Article

Liu, Dong^1,2  Francis, Daniel³  Faili, Firooz³  Middleton, Callum¹  Anaya, Julian¹  Pomeroy, James W.¹  Twitchen, Daniel J.³  Kuball, Martin¹ 

[1] Univ Bristol, HH Wills Phys Lab, Ctr Device Thermog & Reliabil, Bristol BS8 1TL, Avon, England

[2] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[3] Element Six Technol, Santa Clara, CA 95054 USA

关键词: Compound semiconductors;    Diamond films;    Microstructure;    Thermal conductivity;   

DOI  :  10.1016/j.scriptamat.2016.10.006

来源: Elsevier

【 摘 要 】

The impact of seeding of the diamond growth on the microstructural properties of GaN-on-diamond wafers was studied using in situ focused ion beam cross-sectioning and scanning electron microscopy imaging. Microstructural studies revealed that the seeding conditions are a critical parameter to obtain an optimal material, allowing the manufacture of GaN-on-diamond wafers with no microscopic defects and with structural stability under thermal annealing at 825 degrees C. The use of the right seeding conditions also results in homogeneous thermal properties across four inch GaN-on-diamond wafers, which is of critical importance for their use for ultra-high power microwave electronic devices. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

【 授权许可】

Free