Phase development in RbInSe2 thin films - a temperature series

SCRIPTA MATERIALIA

卷:202

Article

Weinberger, Nikolaus^1,2  Kodalle, Tim³  Bertram, Tobias³  Gunder, Rene⁴  Saxer, Andreas²  Lackner, Roman²  Strauss, Georg N.^1,2  Kaufmann, Christian A.³ 

[1] Univ Innsbruck, Fac Engn Sci, Mat Ctr Tyrol, Innsbruck, Austria

[2] Univ Innsbruck, Fac Engn Sci, Unit Mat Technol Innsbruck, Innsbruck, Austria

[3] Helmholtz Zentrum Berlin Mat & Energie, Competence Ctr Photovolta Berlin, Berlin, Germany

[4] Helmholtz Zentrum Berlin Mat & Energie, Dept Struct & Dynam Energy Mat, Berlin, Germany

关键词: Thin films;    Compound semiconductors;    Crystallization;    X-ray diffraction (XRD);    RbinSe(2);   

DOI  :  10.1016/j.scriptamat.2021.113999

来源: Elsevier

【 摘 要 】

Rb, In and Se were deposited in a co-evaporation chamber at various substrate temperatures (T-Sub = 280 degrees C, 350 degrees C, 450 degrees C, 550 degrees C) on Mo coated soda-lime glass. It was found that the RbInSe2 crystal phase is already detectable for nominal T-Sub = 350 degrees C. During calibrated in-situ high-temperature grazing incidence X-ray diffraction on the sample grown at the lowest temperature, crystallization of monoclinic RbInSe2 can be observed at 215 degrees C +/- 3 degrees C. The morphology of the layers shows distinct differences for increasing T-Sub, while the elemental composition of the deposited thin films only exhibits minor changes. The deposited layers show a decrease of (X-ray) amorphous constituents and changes in the preferred crystal orientation of the RISe layer with increasing T-Sub. The influence of Na supply on the layer growth was investigated by applying a SiNxOy diffusion barrier layer in between the glass substrate and the Mo layer on half of the studied samples. (C) 2021 The Author(s). Published by Elsevier Ltd on behalf of Acta Materialia Inc.

【 授权许可】

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