Dislocation dynamics in SiGe alloys

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Yonenaga, I.^1

Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan^1

关键词: Alloy compositions;    Compressive deformations;    Dislocation dynamics;    Dislocation velocities;    Dynamic development;    Local fluctuations;    Stress strain behaviours;    Temperature-insensitive;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012002/pdf
DOI  :  10.1088/1742-6596/471/1/012002

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

The dislocation velocities and mechanical strength of bulk crystals of SixGe1-xalloys grown by the Czochralski method have been investigated by the etch pit technique and compressive deformation tests, respectively. Velocity of dislocations in the SiGe alloys of the composition range 0.004