Advanced semiconductor characterization with aberration corrected electron microscopes

18th Microscopy of Semiconducting Materials Conference

物理学;材料科学

Rouvière, J.L.^1 ; Prestat, E.^1 ; Bayle-Guillemaud, P.^1 ; Den Hertog, M.^2 ; Bougerol, C.^1 ; Cooper, D.^3 ; Zuo, J.^4

CEA-INAC/UJF-Grenoble 1, UMR-E, Minatec, 17 rue des Martyrs, 38054 Grenoble, France^1

Institut Néel, CNRS/UJF, UPR2940, 25 rue des Martyrs, 38042 Grenoble, France^2

CEA-LETI, Minatec, 17 rue des Martyrs, 38054 Grenoble, France^3

Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801, United States^4

关键词: Aberration-corrected;    High resolution image;    Interface analysis;    Semiconductor characterization;    Spatial resolution;    Spherical aberrations;    Structure determination;    Twentieth century;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/471/1/012001/pdf
DOI  :  10.1088/1742-6596/471/1/012001

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Spherical aberration (Cs) correctors were demonstrated in the last years of the twentieth century and became commercially available a few years later. In Grenoble, we received our first probe corrector on a TEM/STEM machine in 2006. Cs-correctors have allowed us to improve the spatial resolution and the contrast of high resolution images both in TEM and STEM. The aim of the article is not to give a detailed description of Cs-correctors or a thorough analysis of their pros and cons but to illustrate what the benefits of the Cs-correctors have been in four areas: (i) atomic structure determination, (ii) polarity measurement, (iii) strain determination and (iv) interface analysis. Emphasis is put on the probe corrector although some comments on image correctors are given as well.