Influence of molecular structure on plasma carbonization of organic semiconductor molecules

11th Asia Pacific Conference on Plasma Science and Technology;25th Symposium on Plasma Science for Materials

Shimada, Toshihiro^1,2 ; Muraya, Naoki^3 ; Tomita, Jun^3 ; Yanase, Takashi^4 ; Nagahama, Taro^1

Division of Materials Chemistry, Faculty of Engineering, Hokkaido University, Kita-ku, Sapporo, Hokkaido 060-8628, Japan^1

CREST-JST, Gobancho, Chiyoda-ku, Tokyo 100-0013, Japan^2

Graduate School of Chemical Science and Engineering, Hokkaido University, Kita-ku, Hokkaido Sapporo, 060-8628, Japan^3

Frontier Chemistry Center, Faculty of Engineering, Hokkaido University, Kita-ku, Sapporo, Hokkaido 060-8628, Japan^4

关键词: Carbon solids;    Nano scale;    Plasma treatment;    Semiconductor molecules;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/441/1/012041/pdf
DOI  :  10.1088/1742-6596/441/1/012041

来源: IOP

【 摘 要 】

The plasma treatment of organic semiconductor molecules includes issues related with nanoscale plasma interfaces. The process was examined by optical emission spectroscopy. It was found that molecules are sublimed by the heat and decomposed by the interaction with the plasma. The product carbon solids were examined by Raman spectroscopy. The raman spectra are strongly dependent on the molecular structures. The carbon solids which does not show graphitic Raman spectra have nanostructures originating from initial molecules.