Quality diagnostics of nanoscale AlAs/GaAs resonant tunnelling heterostructures based on IR-spectroscopic ellipsometry

International Scientific Seminars on "Fundamental and Applied Problems of Photonics and Condensed Matter Physics"

Makeev, Mstislav O.^1 ; Ivanov, Yury A.^1 ; Meshkov, Sergey A.^1

Bauman Moscow State Technical University, 2nd Baumanskaya str. 5, Moscow

105005, Russia^1

关键词: Heterostructure layers;    Infrared spectroscopic ellipsometry;    Nano scale;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/584/1/012014/pdf
DOI  :  10.1088/1742-6596/584/1/012014

来源: IOP

【 摘 要 】

In this work, the procedure of assessing the quality of AlAs/GaAs resonant tunnelling heterostructures with relation to their resistance to diffusion destruction was developed. The diffusion blur of the AlAs/GaAs heterostructure layers was detected by means of infrared-spectroscopic ellipsometry. The diffusion coefficients of Al and Si in GaAs were also calculated.